december 2009 ?2009 fairchild semiconductor corporation FDMC7660S rev.c www.fairchildsemi.com 1 FDMC7660S n-channel power trench ? syncfet ? FDMC7660S n-channel power trench ? syncfet ? 30 v, 20 a, 2.2 m ? features ? max r ds(on) = 2.2 m ? at v gs = 10 v, i d = 20 a ? max r ds(on) = 2.95 m ? at v gs = 4.5 v, i d = 18 a ? high performance technology for extremely low r ds(on) ? termination is lead-free and rohs compliant general description the FDMC7660S has been designed to minimize losses in power conversion applications. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for dc/dc converters ? notebook vcore/gpu low side switch ? networking point of load low side switch ? telecom secondary side rectification mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 40 a -continuous (silicon limited) t c = 25 c 100 -continuous t a = 25 c (note 1a) 20 -pulsed 200 e as single pulse avalanche energy (note 3) 128 mj p d power dissipation 41 w power dissipation (note 1a) 2.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 3 c/w r ja thermal resistance, junction to ambient (note 1a) 53 device marking device package reel size tape width quantity FDMC7660S FDMC7660S power 33 13 ?? 12 mm 3000 units top bottom d d d d s s s g pin 1 4 3 2 1 5 6 7 8 g s s s d d d d power 33
FDMC7660S n-channel power trench ? syncfet ? www.fairchildsemi.com 2 ?2009 fairchild semiconductor corporation FDMC7660S rev.c electrical characteristics t j = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 c 13 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 p a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1.2 1.6 2.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 1 ma, referenced to 25 c -3 mv/ c r ds(on) static drain to source on resistance v gs = 10 v, i d = 20 a 1.7 2.2 m : v gs = 4.5 v, i d = 18 a 2. 5 2.95 v gs = 10 v, i d = 20 a, t j = 125 c 2.2 3.1 g fs forward transconductance v dd = 5 v, i d = 20 a 129 s dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 3250 4325 pf c oss output capacitance 1260 1680 pf c rss reverse transfer capacitance 105 160 pf r g gate resistance 0.8 : switching characteristics t d(on) turn-on delay time v dd = 15 v, i d = 20 a, v gs = 10 v, r gen = 6 : 14 25 ns t r rise time 5 10 ns t d(off) turn-off delay time 34 54 ns t f fall time 3.9 10 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 15 v i d = 20 a 47 66 nc total gate charge v gs = 0 v to 4.5 v 21 29 nc q gs total gate charge 9.5 nc q gd gate to drain ?miller? charge 5 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 20 a (note 2) 0.8 1.2 v v gs = 0 v, i s = 1.9 a (note 2) 0.4 0.7 t rr reverse recovery time i f = 20 a, di/dt = 300 a/ p s 31 50 ns q rr reverse recovery charge 39 62 nc notes: 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 p s, duty cycle < 2.0 %. 3. starting t j = 25 o c; n-ch: l = 1 mh, i as = 16 a, v dd = 27 v, v gs = 10 v. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse ocurrence only. no continuous rating is implied. a. 53c/w when mounted on a 1 i n 2 p a d o f 2 o z c o p p e r b. 125c/w when mounted on a minimum pad of 2 oz copper
FDMC7660S n-channel power trench ? syncfet ? www.fairchildsemi.com 3 ?2009 fairchild semiconductor corporation FDMC7660S rev.c typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 v gs = 6 v v gs = 3 v v gs = 4.5 v v gs = 10 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 4 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 50 100 150 200 0 1 2 3 4 v gs = 3 v v gs = 4 v v gs = 6 v v gs = 4.5 v normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 20 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 2 4 6 8 10 t j = 125 o c i d = 20 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1234 0 50 100 150 200 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMC7660S n-channel power trench ? syncfet ? www.fairchildsemi.com 4 ?2009 fairchild semiconductor corporation FDMC7660S rev.c figure 7. 0 1020304050 0 2 4 6 8 10 i d = 20 a v dd = 15 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 20 v gate charge characteristics figure 8. 0.1 1 10 30 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 30 60 90 120 150 limited by package r t jc = 3 o c/w v gs = 4.5 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n c u r r e n t v s a m b i e n t t e m p e r a t u r e figure 11. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 500 100 us dc 10 s 1 s 100 ms 10 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c fo rw ard bi as safe operating area figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 3000 single pulse r t ja = 125 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDMC7660S n-channel power trench ? syncfet ? www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation FDMC7660S rev.c figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.0001 0.001 0.01 0.1 1 2 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMC7660S n-channel power trench ? syncfet ? www.fairchildsemi.com 6 ?2009 fairchild semiconductor corporation FDMC7660S rev.c syncfet schottky body diode characteristics fairchild?s syncfet process emb eds a schottky diode in parallel with powertrench mosfet. th is diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 27 shows the reverse recovery characteristic of the FDMC7660S. schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. this will increase the power in the device. typical char acteristics (continued) figure 14. FDMC7660S syncfet body diode reverse recovery characteristic figure 15. syncfet body diode reverse leakage versus drain-source voltage 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) 0 50 100 150 200 -5 0 5 10 15 20 di/dt = 300 a/ s current (a) time (ns)
FDMC7660S n-channel power trench ? syncfet ? www.fairchildsemi.com 7 ?2009 fairchild semiconductor corporation FDMC7660S rev.c dimensional outline and pad layout
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